mechanical data e}? ? dice size a x =a y =380um/b x =b y =180um t( ? ?] 4 (gross die:45,620pcs/good die>42,427pcs) chip thickness 230um20um scribe line width 60um top metal al/au/ag back side metal al/au/ag/sn parameter ^?u}o }v]?}v? so hv]? reverse stand - of voltage v rwm 5 v peak pulse power p pp tp=8/20us 140 * w peak pulse current i pp tp=8/20us 10* a electrostatc discharge v esd iec61000 - 4 - 2 level 4 8(contact) 15(air) kv max.juncton temp. t j 150 c parameter ^?u}o }v]?}v d]vx d??x d?x hv]? breakdown voltage v br i t =1ma 5.6 9.4 v reverse leakage current i r v= 5v 0.09 ua clamping voltage v c i pp =1.0a i pp =10a 12.0* 14.0* v diode capacitance cj v r =0v f=1mh z 15.0 20.0 pf characteristics ta=25 chip bi - directional tvs diode futurewafer technology co.,ltd www.futurewafer.com.tw+886 - 3 - 3573583 fb - 5vs32 ew1608c2 - fw - a notes: ( 1)sampling testng:no bad dice inking/guaranteed good die >93% (2)testng follow customer (3)tj=ta+rth(j - a)*(pf+pr),where rth(j - a) - thermal resistance,pf - forward power dissipaton, pr - revers power dissipaton (4)**for device testng 1 2
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